摘要：太阳能选择性吸收膜制备技术是太阳能热利用的关键技术之一，膜系的光学特性是提高光热转化效率的关键，也是当今科研人员研究的重点课题。本文通过磁控溅射技术制备TiNxOy和SS-AlN太阳能选择性吸收膜系，表征了薄膜的结构和表面形貌。TiNxOy膜系Ti靶、Si靶溅射速率较高，制成的TiNxOy薄膜表面形貌光滑均匀，颜色均匀无色差，薄膜平均吸收率可高达92%，发射率可低到4%。SS-AlN膜系SS靶、Cu靶、Al靶溅射速率很高、溅射均匀，制成SS-AlN薄膜表面均匀平整颗粒明显，薄膜吸收率可高达94%，发射率可低至3%。初步探究了不同厚度的SiO2减反层对TiNxOy选择性吸收膜吸收发射性能的影响，并利用150℃热老化和盐雾实验对其耐候性进行研究。当SiO2膜层较薄时，经150℃热老化和盐雾实验后吸收发射性能下降明显。

关键字：太阳能选择性吸收膜；磁控溅射技术；吸收率；发射率；耐候性。

Abstract:The preparation technology of solar energy selective absorption coating is one of the key technologies of solar heat utilization while the optical characteristics of film system is of great concern to improve photo-thermal energy conversion efficiency, which is also one of the priority of study for the scientific research personnel presently. In this paper, TiNxOy and SS-AlN solar selective absorbing coating was successfully deposited through the magnetron sputtering technology and their structure and surface morphology have been characterized as well. For TiNxOy film with Ti target and Si target not only the deposition rate is high but each layer film is also smooth and uniform without color aberration; Delightfully, the average absorption rate of TiNxOy film can be as high as 92% while the firing rate as low as 4%. On the other hand, the SS target, Cu target and Al target of SS-AlN film have high deposition rate and uniform sputtering layers. The thin film made from SS-AlN film has thin smooth surface and apparent particles whose absorption rate can be as high as 94% while the firing rate as low as 3%. The influence of the thickness of SiO2 antireflection layers on absorption and emission properties has been preliminarily studied. The weather resistance has been studied in the heating aging experiments under the circumstance of 150℃ and salt spray tests. The aging experiments show that solar energy selective absorption films with a thinner SiO2 coating offer poor weather resistance.

Keywords: Solar energy selective absorbing film;Magnetron sputtering technology; absorption rate;emission rate;weather resistance.